APT68GA60B2D40 Pricing (USD) [8822PC Stock]
- 1 pcs$4.69487
- 47 pcs$4.67151
- Nimewo Pati:
- APT68GA60B2D40
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- IGBT 600V 121A 520W TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT68GA60B2D40 electronic components. APT68GA60B2D40 can be shipped within 24 hours after order. If you have any demands for APT68GA60B2D40, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT68GA60B2D40 Atribi pwodwi yo
Nimewo Pati :
APT68GA60B2D40
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 600V 121A 520W TO-247
Seri :
POWER MOS 8™
Estati Pati :
Active
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
121A
Kouran - Pèseptè batman (Icm) :
202A
Vce (sou) (Max) @ Vge, Ic :
2.5V @ 15V, 40A
Pouvwa - Max :
520W
Oblije chanje enèji :
715µJ (on), 607µJ (off)
Kalite Antre :
Standard
Gate chaje :
198nC
Td (on / off) @ 25 ° C :
21ns/133ns
Kondisyon egzamen an :
400V, 40A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3 Variant
Pake Aparèy Founisè :
-
Ou ka enterese tou
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-
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