ON Semiconductor - NGTG35N65FL2WG

KEY Part #: K6422603

NGTG35N65FL2WG Pricing (USD) [21697PC Stock]

  • 1 pcs$1.89942
  • 240 pcs$1.39129

Nimewo Pati:
NGTG35N65FL2WG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 650V 60A 167W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTG35N65FL2WG Atribi pwodwi yo

Nimewo Pati : NGTG35N65FL2WG
Manifakti : ON Semiconductor
Deskripsyon : IGBT 650V 60A 167W TO247
Seri : -
Estati Pati : Active
Kalite IGBT : Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 70A
Kouran - Pèseptè batman (Icm) : 120A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 35A
Pouvwa - Max : 300W
Oblije chanje enèji : 840µJ (on), 280µJ (off)
Kalite Antre : Standard
Gate chaje : 125nC
Td (on / off) @ 25 ° C : 72ns/132ns
Kondisyon egzamen an : 400V, 35A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247-3