Vishay Semiconductor Diodes Division - MBRB20H35CT-E3/81

KEY Part #: K6475959

[5924PC Stock]


    Nimewo Pati:
    MBRB20H35CT-E3/81
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE ARRAY SCHOTTKY 35V TO263AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division MBRB20H35CT-E3/81 electronic components. MBRB20H35CT-E3/81 can be shipped within 24 hours after order. If you have any demands for MBRB20H35CT-E3/81, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MBRB20H35CT-E3/81 Atribi pwodwi yo

    Nimewo Pati : MBRB20H35CT-E3/81
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE ARRAY SCHOTTKY 35V TO263AB
    Seri : Automotive, AEC-Q101
    Estati Pati : Obsolete
    Konfigirasyon dyòd : 1 Pair Common Cathode
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 35V
    Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 10A
    Voltage - Forward (Vf) (Max) @ Si : 630mV @ 10A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 100µA @ 35V
    Operating Tanperati - Junction : -65°C ~ 175°C
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : TO-263AB

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