APT100GN120B2G Pricing (USD) [3292PC Stock]
- 1 pcs$13.15772
- 10 pcs$12.17228
- 25 pcs$11.18517
- 100 pcs$10.39566
- Nimewo Pati:
- APT100GN120B2G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- IGBT 1200V 245A 960W TMAX.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - JFETs and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT100GN120B2G electronic components. APT100GN120B2G can be shipped within 24 hours after order. If you have any demands for APT100GN120B2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT100GN120B2G Atribi pwodwi yo
Nimewo Pati :
APT100GN120B2G
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 1200V 245A 960W TMAX
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
245A
Kouran - Pèseptè batman (Icm) :
300A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 100A
Pouvwa - Max :
960W
Oblije chanje enèji :
11mJ (on), 9.5mJ (off)
Kalite Antre :
Standard
Gate chaje :
540nC
Td (on / off) @ 25 ° C :
50ns/615ns
Kondisyon egzamen an :
800V, 100A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3 Variant
Pake Aparèy Founisè :
-
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