Toshiba Memory America, Inc. - TC58NYG1S3HBAI6

KEY Part #: K939718

TC58NYG1S3HBAI6 Pricing (USD) [26323PC Stock]

  • 1 pcs$1.26922
  • 10 pcs$1.08162
  • 25 pcs$1.06432
  • 50 pcs$1.06156
  • 100 pcs$0.94850
  • 250 pcs$0.91770

Nimewo Pati:
TC58NYG1S3HBAI6
Manifakti:
Toshiba Memory America, Inc.
Detaye deskripsyon:
IC FLASH 2G PARALLEL 67VFBGA. NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Embedded - FPGAs (Field Programmable Gate Array) a, Lojik - Kominote ak dèlko, Entèfas - UARTs (Transmetè Inivèsèl Reseptè Asenkr, Entèfas - Modil yo, Entèfas - Entèfas sensor ak detektè, Lojik - Gates ak Inverters - Multi-Fonksyon, confi, PMIC - V / F ak F / V Convertisseurs and Lineyè - Anplifikatè - Objektif Espesyal ...
Avantaj konpetitif:
We specialize in Toshiba Memory America, Inc. TC58NYG1S3HBAI6 electronic components. TC58NYG1S3HBAI6 can be shipped within 24 hours after order. If you have any demands for TC58NYG1S3HBAI6, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TC58NYG1S3HBAI6 Atribi pwodwi yo

Nimewo Pati : TC58NYG1S3HBAI6
Manifakti : Toshiba Memory America, Inc.
Deskripsyon : IC FLASH 2G PARALLEL 67VFBGA
Seri : -
Estati Pati : Active
Kalite memwa yo : Non-Volatile
Fòma memwa : FLASH
Teknoloji : FLASH - NAND (SLC)
Size memwa : 2Gb (256M x 8)
Frè frekans lan : -
Ekri Sik Tan - Pawòl, Page : 25ns
Tan aksè : 25ns
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 1.7V ~ 1.95V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 67-VFBGA
Pake Aparèy Founisè : 67-VFBGA (6.5x8)

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