PMZB350UPE,315 Pricing (USD) [820075PC Stock]
- 1 pcs$0.04533
- 10,000 pcs$0.04510
- Nimewo Pati:
- PMZB350UPE,315
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET P-CH 20V 1A 3DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMZB350UPE,315 electronic components. PMZB350UPE,315 can be shipped within 24 hours after order. If you have any demands for PMZB350UPE,315, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMZB350UPE,315 Atribi pwodwi yo
Nimewo Pati :
PMZB350UPE,315
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET P-CH 20V 1A 3DFN
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
450 mOhm @ 300mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.9nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
127pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
360mW (Ta), 3.125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1006B-3
Pake / Ka :
3-XFDFN
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