NCP5111DR2G Pricing (USD) [232104PC Stock]
- 1 pcs$0.17807
- 2,500 pcs$0.17718
- 5,000 pcs$0.16832
- 12,500 pcs$0.16200
- 25,000 pcs$0.15693
- Nimewo Pati:
- NCP5111DR2G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IC DRIVER HI/LOW SIDE HV 8-SOIC. Gate Drivers HIGH VOLT MOSFET DR MOSFET IGBT DRIVER
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Lineyè - Anplifikatè - Instrumentation, OP Amps, A, Lineyè - Anplifikatè - Amps Videyo ak Modil yo, Embedded - Microprocessors, IC espesyalize yo, Entèfas - Telecom, PMIC - Chofè lazè, Entèfas - CODECs and PMIC - Dirije Chofè yo ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NCP5111DR2G electronic components. NCP5111DR2G can be shipped within 24 hours after order. If you have any demands for NCP5111DR2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NCP5111DR2G Atribi pwodwi yo
Nimewo Pati :
NCP5111DR2G
Manifakti :
ON Semiconductor
Deskripsyon :
IC DRIVER HI/LOW SIDE HV 8-SOIC
Seri :
-
Estati Pati :
Active
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Synchronous
Kantite Chofè yo :
2
Kalite Gate :
IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou :
10V ~ 20V
Vòltaj lojik - VIL, VIH :
0.8V, 2.3V
Kouran - Peak Sòti (Sous, Lavabo) :
250mA, 500mA
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
600V
Rise / Fall Time (Tip) :
85ns, 35ns
Operating Tanperati :
-40°C ~ 125°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC
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