[1114PC Stock]
- Nimewo Pati:
- HIGFEB1BOSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MODULE IGBT HYBRID PK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Transistors - JFETs and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies HIGFEB1BOSA1 electronic components. HIGFEB1BOSA1 can be shipped within 24 hours after order. If you have any demands for HIGFEB1BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HIGFEB1BOSA1 Atribi pwodwi yo
Nimewo Pati :
HIGFEB1BOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MODULE IGBT HYBRID PK
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Nou konte genyen :
-
Voltage - Pèseptè ki emèt deba (Max) :
-
Kouran - Pèseptè (Ic) (Max) :
-
Pouvwa - Max :
-
Vce (sou) (Max) @ Vge, Ic :
-
Kouran - Cutoff Pèseptè (Max) :
-
Antre kapasite (Cies) @ Vce :
-
Antre :
-
NTC thermistor :
-
Operating Tanperati :
-
Mounting Kalite :
-
Pake / Ka :
-
Pake Aparèy Founisè :
-
Dènye nouvèl
Ou ka enterese tou
-
VS-ENQ030L120S
Vishay Semiconductor Diodes Division
IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology
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