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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Diodes - Rèkteur - Single
  5. JAN1N5807US

Microsemi Corporation - JAN1N5807US

KEY Part #: K6453027

JAN1N5807US Pricing (USD) [9771PC Stock]

  • 1 pcs$4.66293
  • 100 pcs$4.63973
Nimewo Pati:
JAN1N5807US
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE GEN PURP 50V 6A B-MELF. ESD Suppressors / TVS Diodes MIL, QPL PART, 3A 50V ULTRAFAST RECT- SQ END CAPS
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Modil pouvwa chofè and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Microsemi Corporation JAN1N5807US electronic components. JAN1N5807US can be shipped within 24 hours after order. If you have any demands for JAN1N5807US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5807US Atribi pwodwi yo

Nimewo Pati : JAN1N5807US
Manifakti : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 50V 6A B-MELF
Seri : Military, MIL-PRF-19500/477
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 50V
Kouran - Mwayèn Rèktifye (Io) : 6A
Voltage - Forward (Vf) (Max) @ Si : 875mV @ 4A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 30ns
Kouran - Fèy Reverse @ Vr : 5µA @ 50V
Kapasite @ Vr, F : 60pF @ 10V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SQ-MELF, B
Pake Aparèy Founisè : B, SQ-MELF
Operating Tanperati - Junction : -65°C ~ 175°C

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