Vishay Semiconductor Diodes Division - BYG10D-E3/TR3

KEY Part #: K6439826

BYG10D-E3/TR3 Pricing (USD) [843370PC Stock]

  • 1 pcs$0.04386
  • 7,500 pcs$0.03996
  • 15,000 pcs$0.03643
  • 37,500 pcs$0.03408
  • 52,500 pcs$0.03134

Nimewo Pati:
BYG10D-E3/TR3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 200V 1.5A. Rectifiers 1.5 Amp 200 Volt
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYG10D-E3/TR3 electronic components. BYG10D-E3/TR3 can be shipped within 24 hours after order. If you have any demands for BYG10D-E3/TR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10D-E3/TR3 Atribi pwodwi yo

Nimewo Pati : BYG10D-E3/TR3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 200V 1.5A
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 1.5A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 4µs
Kouran - Fèy Reverse @ Vr : 1µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C

Ou ka enterese tou
  • BAS19

    ON Semiconductor

    DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA

  • MMBD4448

    ON Semiconductor

    DIODE GEN PURP 75V 200MA SOT23-3. Diodes - General Purpose, Power, Switching Hi Conductance Fast

  • BAV20W-E3-18

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 250MA SOD123. Diodes - General Purpose, Power, Switching 200V 625mA 1A IFSM

  • 1N4148W-HE3-18

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns

  • SD103AW-HE3-18

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 350MA 40V SOD123. Schottky Diodes & Rectifiers 5uA 40Volt 15A IFSM AUTO

  • SD101AW-G3-18

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 400MW 60V SOD123. Schottky Diodes & Rectifiers 30mA 60Volt 2A IFSM