Nimewo Pati :
APT10SCD120B
Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE SCHOTTKY 1.2KV 36A TO247
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
36A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.8V @ 10A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
200µA @ 1200V
Kapasite @ Vr, F :
600pF @ 0V, 1MHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Operating Tanperati - Junction :
-55°C ~ 150°C