2SK879-GR(TE85L,F) Pricing (USD) [663036PC Stock]
- 1 pcs$0.05579
- Nimewo Pati:
- 2SK879-GR(TE85L,F)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- JFET N-CH 0.1W USM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage 2SK879-GR(TE85L,F) electronic components. 2SK879-GR(TE85L,F) can be shipped within 24 hours after order. If you have any demands for 2SK879-GR(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK879-GR(TE85L,F) Atribi pwodwi yo
Nimewo Pati :
2SK879-GR(TE85L,F)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
JFET N-CH 0.1W USM
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Vòltaj - Dekonpozisyon (V (BR) GSS) :
-
Drenaj nan Voltage Sous (Vdss) :
-
Kouran - Drenaj (Idss) @ Vds (Vgs = 0) :
2.6mA @ 10V
Kouran Drenaj (Id) - Max :
-
Voltage - Cutoff (VGS koupe) @ Id :
400mV @ 100nA
Antre kapasite (Ciss) (Max) @ Vds :
8.2pF @ 10V
Rezistans - RDS (Sou) :
-
Pouvwa - Max :
100mW
Operating Tanperati :
125°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SC-70, SOT-323
Pake Aparèy Founisè :
USM
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