Vishay Semiconductor Diodes Division - VS-2EJH01-M3/6B

KEY Part #: K6428507

VS-2EJH01-M3/6B Pricing (USD) [611010PC Stock]

  • 1 pcs$0.06054
  • 14,000 pcs$0.05264
  • 28,000 pcs$0.05199

Nimewo Pati:
VS-2EJH01-M3/6B
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 2A DO221AC. Rectifiers Hyperfst 2A 100V Fred Pt Rectfr
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Tiristors - SCR and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-2EJH01-M3/6B electronic components. VS-2EJH01-M3/6B can be shipped within 24 hours after order. If you have any demands for VS-2EJH01-M3/6B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-2EJH01-M3/6B Atribi pwodwi yo

Nimewo Pati : VS-2EJH01-M3/6B
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 2A DO221AC
Seri : FRED Pt®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 930mV @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 2µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-221AC, SMA Flat Leads
Pake Aparèy Founisè : DO-221AC (SlimSMA)
Operating Tanperati - Junction : -65°C ~ 175°C

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