Manifakti :
ON Semiconductor
Deskripsyon :
1200V 50A SIC SBD
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
77A (DC)
Voltage - Forward (Vf) (Max) @ Si :
-
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
200µA @ 1200V
Kapasite @ Vr, F :
2560pF @ 1V, 100kHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-2
Operating Tanperati - Junction :
-55°C ~ 175°C