Vishay Siliconix - SI7434ADP-T1-RE3

KEY Part #: K6419185

SI7434ADP-T1-RE3 Pricing (USD) [96050PC Stock]

  • 1 pcs$0.40709

Nimewo Pati:
SI7434ADP-T1-RE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CHAN 250V POWERPAK SO-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Diodes - Zener - Arrays and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI7434ADP-T1-RE3 electronic components. SI7434ADP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SI7434ADP-T1-RE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7434ADP-T1-RE3 Atribi pwodwi yo

Nimewo Pati : SI7434ADP-T1-RE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CHAN 250V POWERPAK SO-8
Seri : ThunderFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.7A (Ta), 12.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 7.5V, 10V
RD sou (Max) @ Id, Vgs : 150 mOhm @ 3.7A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 16.5nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 600pF @ 125V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 5W (Ta), 54.3W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8