Infineon Technologies - SPD08P06P

KEY Part #: K6409498

[8545PC Stock]


    Nimewo Pati:
    SPD08P06P
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET P-CH 60V 8.83A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies SPD08P06P electronic components. SPD08P06P can be shipped within 24 hours after order. If you have any demands for SPD08P06P, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SPD08P06P Atribi pwodwi yo

    Nimewo Pati : SPD08P06P
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET P-CH 60V 8.83A DPAK
    Seri : SIPMOS®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.83A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : -
    RD sou (Max) @ Id, Vgs : 300 mOhm @ 6.2A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V
    Vgs (Max) : -
    Antre kapasite (Ciss) (Max) @ Vds : 420pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 42W (Tc)
    Operating Tanperati : -
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PG-TO252-3
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63