[1194PC Stock]
- Nimewo Pati:
- BSL802SNL6327HTSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 20V 7.5A TSOP6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSL802SNL6327HTSA1 electronic components. BSL802SNL6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BSL802SNL6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSL802SNL6327HTSA1 Atribi pwodwi yo
Nimewo Pati :
BSL802SNL6327HTSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 20V 7.5A TSOP6
Seri :
OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 2.5V
RD sou (Max) @ Id, Vgs :
22 mOhm @ 7.5A, 2.5V
Vgs (th) (Max) @ Id :
750mV @ 30µA
Chaje Gate (Qg) (Max) @ Vgs :
4.7nC @ 2.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
1347pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TSOP-6-6
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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