[1225PC Stock]
- Nimewo Pati:
- TK40P04M1(T6RSS-Q)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 40V 40A 3DP 2-7K1A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - JFETs, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK40P04M1(T6RSS-Q) electronic components. TK40P04M1(T6RSS-Q) can be shipped within 24 hours after order. If you have any demands for TK40P04M1(T6RSS-Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK40P04M1(T6RSS-Q) Atribi pwodwi yo
Nimewo Pati :
TK40P04M1(T6RSS-Q)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 40V 40A 3DP 2-7K1A
Seri :
U-MOSVI-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
11 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1920pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
47W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DP
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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