[1803PC Stock]
- Nimewo Pati:
- 1N5627GP-E3/73
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 800V 3A DO201AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division 1N5627GP-E3/73 electronic components. 1N5627GP-E3/73 can be shipped within 24 hours after order. If you have any demands for 1N5627GP-E3/73, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N5627GP-E3/73 Atribi pwodwi yo
Nimewo Pati :
1N5627GP-E3/73
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 800V 3A DO201AD
Seri :
-
Estati Pati :
Obsolete
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
1V @ 3A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
3µs
Kouran - Fèy Reverse @ Vr :
200µA @ 800V
Kapasite @ Vr, F :
40pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-201AD, Axial
Pake Aparèy Founisè :
DO-201AD
Operating Tanperati - Junction :
-65°C ~ 175°C
Dènye nouvèl
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