Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 600V 2.6A AXIAL
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
2.6A
Voltage - Forward (Vf) (Max) @ Si :
1.05V @ 2.6A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Mounting Kalite :
Through Hole
Operating Tanperati - Junction :
150°C (Max)