Manifakti :
Texas Instruments
Deskripsyon :
IC DUAL 2A NAND FET DRVR 8-SOIC
Kondwi konte genyen :
Low-Side
Kalite Chèn :
Synchronous
Kalite Gate :
N-Channel, P-Channel MOSFET
Voltage - Pwovizyon pou :
4V ~ 14V
Vòltaj lojik - VIL, VIH :
1V, 4V
Kouran - Peak Sòti (Sous, Lavabo) :
2A, 2A
Segondè Voltage Side - Max (Bootstrap) :
-
Rise / Fall Time (Tip) :
14ns, 15ns
Operating Tanperati :
-40°C ~ 125°C (TA)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC