Manifakti :
Infineon Technologies
Deskripsyon :
HI/LO SIDE DRVR 8SOIC
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Independent
Kalite Gate :
N-Channel MOSFET
Voltage - Pwovizyon pou :
10V ~ 20V
Vòltaj lojik - VIL, VIH :
0.7V, 2.2V
Kouran - Peak Sòti (Sous, Lavabo) :
1A, 1A
Segondè Voltage Side - Max (Bootstrap) :
200V
Rise / Fall Time (Tip) :
35ns, 20ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC