PMZ370UNEYL Pricing (USD) [1586184PC Stock]
- 1 pcs$0.03050
- 10,000 pcs$0.03035
- Nimewo Pati:
- PMZ370UNEYL
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 30V 0.9A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMZ370UNEYL electronic components. PMZ370UNEYL can be shipped within 24 hours after order. If you have any demands for PMZ370UNEYL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMZ370UNEYL Atribi pwodwi yo
Nimewo Pati :
PMZ370UNEYL
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 30V 0.9A
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
900mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
490 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
1.05V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.16nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
78pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
360mW (Ta), 2.7W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1006-3
Pake / Ka :
SC-101, SOT-883
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