ON Semiconductor - NGTD9R120F2WP

KEY Part #: K6442014

NGTD9R120F2WP Pricing (USD) [161647PC Stock]

  • 1 pcs$0.22882
  • 1,035 pcs$0.18064

Nimewo Pati:
NGTD9R120F2WP
Manifakti:
ON Semiconductor
Detaye deskripsyon:
DIODE GEN PURP 1.2KV DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - JFETs, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor NGTD9R120F2WP electronic components. NGTD9R120F2WP can be shipped within 24 hours after order. If you have any demands for NGTD9R120F2WP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTD9R120F2WP Atribi pwodwi yo

Nimewo Pati : NGTD9R120F2WP
Manifakti : ON Semiconductor
Deskripsyon : DIODE GEN PURP 1.2KV DIE
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : -
Voltage - Forward (Vf) (Max) @ Si : 2.6V @ 15A
Vitès : -
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1µA @ 1200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : Die
Pake Aparèy Founisè : Die
Operating Tanperati - Junction : 175°C (Max)

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