Infineon Technologies - BSM35GP120GBOSA1

KEY Part #: K6534317

BSM35GP120GBOSA1 Pricing (USD) [592PC Stock]

  • 1 pcs$78.35027

Nimewo Pati:
BSM35GP120GBOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 2 LOW POWER ECONO3-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Infineon Technologies BSM35GP120GBOSA1 electronic components. BSM35GP120GBOSA1 can be shipped within 24 hours after order. If you have any demands for BSM35GP120GBOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM35GP120GBOSA1 Atribi pwodwi yo

Nimewo Pati : BSM35GP120GBOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 2 LOW POWER ECONO3-3
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Nou konte genyen : Full Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 45A
Pouvwa - Max : 230W
Vce (sou) (Max) @ Vge, Ic : 2.85V @ 15V, 35A
Kouran - Cutoff Pèseptè (Max) : 500µA
Antre kapasite (Cies) @ Vce : 1.5nF @ 25V
Antre : Three Phase Bridge Rectifier
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

Ou ka enterese tou
  • GA400TD25S

    Vishay Semiconductor Diodes Division

    IGBT FAST 250V 400A INT-A-PAK.

  • CPV364M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 15A IMS-2.

  • CPV363M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 9A IMS-2.

  • GA200SA60U

    Vishay Semiconductor Diodes Division

    IGBT UFAST 600V 100A SOT227.

  • GA200SA60S

    Vishay Semiconductor Diodes Division

    IGBT STD 600V 100A SOT227.

  • STGE50NB60HD

    STMicroelectronics

    IGBT N-CHAN 600V 50A ISOTOP.