FF650R17IE4DPB2BOSA1 Pricing (USD) [151PC Stock]
- 1 pcs$304.26154
- Nimewo Pati:
- FF650R17IE4DPB2BOSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT MODULE VCES 1700V 650A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies FF650R17IE4DPB2BOSA1 electronic components. FF650R17IE4DPB2BOSA1 can be shipped within 24 hours after order. If you have any demands for FF650R17IE4DPB2BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FF650R17IE4DPB2BOSA1 Atribi pwodwi yo
Nimewo Pati :
FF650R17IE4DPB2BOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT MODULE VCES 1700V 650A
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
2 Independent
Voltage - Pèseptè ki emèt deba (Max) :
1700V
Kouran - Pèseptè (Ic) (Max) :
650A
Pouvwa - Max :
-
Vce (sou) (Max) @ Vge, Ic :
2.45V @ 15V, 650A
Kouran - Cutoff Pèseptè (Max) :
5mA
Antre kapasite (Cies) @ Vce :
54nF @ 25V
Antre :
Standard
NTC thermistor :
Yes
Operating Tanperati :
-40°C ~ 150°C
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
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