IXYS - MIEB101H1200EH

KEY Part #: K6534497

MIEB101H1200EH Pricing (USD) [891PC Stock]

  • 1 pcs$55.01943
  • 5 pcs$54.74570

Nimewo Pati:
MIEB101H1200EH
Manifakti:
IXYS
Detaye deskripsyon:
IGBT MODULE 1200V 183A QUAD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in IXYS MIEB101H1200EH electronic components. MIEB101H1200EH can be shipped within 24 hours after order. If you have any demands for MIEB101H1200EH, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MIEB101H1200EH Atribi pwodwi yo

Nimewo Pati : MIEB101H1200EH
Manifakti : IXYS
Deskripsyon : IGBT MODULE 1200V 183A QUAD
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Full Bridge Inverter
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 183A
Pouvwa - Max : 630W
Vce (sou) (Max) @ Vge, Ic : 2.2V @ 15V, 100A
Kouran - Cutoff Pèseptè (Max) : 300µA
Antre kapasite (Cies) @ Vce : 7.43nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 125°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : E3
Pake Aparèy Founisè : E3