Infineon Technologies - BSC882N03MSGATMA1

KEY Part #: K6404609

[1952PC Stock]


    Nimewo Pati:
    BSC882N03MSGATMA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 34V 22A TDSON-8.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BSC882N03MSGATMA1 electronic components. BSC882N03MSGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC882N03MSGATMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSC882N03MSGATMA1 Atribi pwodwi yo

    Nimewo Pati : BSC882N03MSGATMA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 34V 22A TDSON-8
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 34V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Ta), 100A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 2.6 mOhm @ 30A, 10V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 55nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 4300pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2.5W (Ta), 69W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PG-TDSON-8
    Pake / Ka : 8-PowerTDFN

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