TK9P65W,RQ Pricing (USD) [118862PC Stock]
- 1 pcs$0.31118
- 2,000 pcs$0.30893
- Nimewo Pati:
- TK9P65W,RQ
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 650V 9.3A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Diodes - Zener - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK9P65W,RQ electronic components. TK9P65W,RQ can be shipped within 24 hours after order. If you have any demands for TK9P65W,RQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK9P65W,RQ Atribi pwodwi yo
Nimewo Pati :
TK9P65W,RQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 650V 9.3A DPAK
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
560 mOhm @ 4.6A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 350µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
700pF @ 300V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
80W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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