Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE GEN PURP REV 200V 6A DO4
Kalite dyòd :
Standard, Reverse Polarity
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
6A
Voltage - Forward (Vf) (Max) @ Si :
1.4V @ 6A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
200ns
Kouran - Fèy Reverse @ Vr :
15µA @ 50V
Mounting Kalite :
Chassis, Stud Mount
Pake / Ka :
DO-203AA, DO-4, Stud
Pake Aparèy Founisè :
DO-4
Operating Tanperati - Junction :
-65°C ~ 150°C