Diodes Incorporated - ZXMN6A25K

KEY Part #: K6410166

[31PC Stock]


    Nimewo Pati:
    ZXMN6A25K
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET N-CH 60V 7A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Tiristors - SCR and Diodes - Bridge rèktifikateur ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated ZXMN6A25K electronic components. ZXMN6A25K can be shipped within 24 hours after order. If you have any demands for ZXMN6A25K, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXMN6A25K Atribi pwodwi yo

    Nimewo Pati : ZXMN6A25K
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET N-CH 60V 7A DPAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 50 mOhm @ 3.6A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 20.4nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1063pF @ 30V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2.11W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : TO-252-3
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63