Nexperia USA Inc. - BUK664R8-75C,118

KEY Part #: K6415326

BUK664R8-75C,118 Pricing (USD) [8343PC Stock]

  • 1 pcs$0.77767
  • 10 pcs$0.70283
  • 100 pcs$0.56489

Nimewo Pati:
BUK664R8-75C,118
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 75V 120A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - Bipolè (BJT) - RF and Diodes - Zener - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUK664R8-75C,118 Atribi pwodwi yo

Nimewo Pati : BUK664R8-75C,118
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 75V 120A D2PAK
Seri : Automotive, AEC-Q101, TrenchMOS™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 177nC @ 10V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 11400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 263W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB