DMJ70H900HJ3 Pricing (USD) [64604PC Stock]
- 1 pcs$0.60827
- 75 pcs$0.60524
- Nimewo Pati:
- DMJ70H900HJ3
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET BVDSS 651V 800V TO251.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMJ70H900HJ3 electronic components. DMJ70H900HJ3 can be shipped within 24 hours after order. If you have any demands for DMJ70H900HJ3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMJ70H900HJ3 Atribi pwodwi yo
Nimewo Pati :
DMJ70H900HJ3
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 651V 800V TO251
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
900 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18.4nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
603pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
68W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251
Pake / Ka :
TO-251-3, IPak, Short Leads
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