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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. VN1206L-G-P002

Microchip Technology - VN1206L-G-P002

KEY Part #: K6393228

VN1206L-G-P002 Pricing (USD) [75663PC Stock]

  • 1 pcs$0.52944
  • 2,000 pcs$0.52681
Nimewo Pati:
VN1206L-G-P002
Manifakti:
Microchip Technology
Detaye deskripsyon:
MOSFET N-CH 120V 0.23A TO92-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Microchip Technology VN1206L-G-P002 electronic components. VN1206L-G-P002 can be shipped within 24 hours after order. If you have any demands for VN1206L-G-P002, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VN1206L-G-P002 Atribi pwodwi yo

Nimewo Pati : VN1206L-G-P002
Manifakti : Microchip Technology
Deskripsyon : MOSFET N-CH 120V 0.23A TO92-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 230mA (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 10V
RD sou (Max) @ Id, Vgs : 6 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 125pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-92-3
Pake / Ka : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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