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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDMC510P

ON Semiconductor - FDMC510P

KEY Part #: K6416923

FDMC510P Pricing (USD) [144590PC Stock]

  • 1 pcs$0.25709
  • 3,000 pcs$0.25581
Nimewo Pati:
FDMC510P
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 20V 18A 8-MLP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMC510P electronic components. FDMC510P can be shipped within 24 hours after order. If you have any demands for FDMC510P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMC510P Atribi pwodwi yo

Nimewo Pati : FDMC510P
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 20V 18A 8-MLP
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta), 18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 8 mOhm @ 12A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 116nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 7860pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.3W (Ta), 41W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-MLP (3.3x3.3)
Pake / Ka : 8-PowerWDFN

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