Vishay Semiconductor Diodes Division - 1N4150W-E3-18

KEY Part #: K6454631

1N4150W-E3-18 Pricing (USD) [2895399PC Stock]

  • 1 pcs$0.01348
  • 10,000 pcs$0.01342
  • 30,000 pcs$0.01262
  • 50,000 pcs$0.01184
  • 100,000 pcs$0.01052

Nimewo Pati:
1N4150W-E3-18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division 1N4150W-E3-18 electronic components. 1N4150W-E3-18 can be shipped within 24 hours after order. If you have any demands for 1N4150W-E3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4150W-E3-18 Atribi pwodwi yo

Nimewo Pati : 1N4150W-E3-18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 50V 200MA SOD123
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 50V
Kouran - Mwayèn Rèktifye (Io) : 200mA
Voltage - Forward (Vf) (Max) @ Si : 1V @ 200mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 4ns
Kouran - Fèy Reverse @ Vr : 100nA @ 50V
Kapasite @ Vr, F : 2.5pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123
Operating Tanperati - Junction : -55°C ~ 150°C

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