ES07B-GS18 Pricing (USD) [921392PC Stock]
- 1 pcs$0.04236
- 10,000 pcs$0.04215
- 30,000 pcs$0.03876
- Nimewo Pati:
- ES07B-GS18
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 1.2A DO219AB. Rectifiers 100 Volt 0.7A 25ns 30 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division ES07B-GS18 electronic components. ES07B-GS18 can be shipped within 24 hours after order. If you have any demands for ES07B-GS18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES07B-GS18 Atribi pwodwi yo
Nimewo Pati :
ES07B-GS18
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 1.2A DO219AB
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
1.2A
Voltage - Forward (Vf) (Max) @ Si :
980mV @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
10µA @ 100V
Kapasite @ Vr, F :
4pF @ 4V, 50MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-219AB
Pake Aparèy Founisè :
DO-219AB (SMF)
Operating Tanperati - Junction :
-55°C ~ 150°C
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