Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 100V 3.3A C16
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
3.3A
Voltage - Forward (Vf) (Max) @ Si :
850mV @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1mA @ 100V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
C-16
Operating Tanperati - Junction :
-40°C ~ 150°C