[3280PC Stock]
- Nimewo Pati:
- IRD3CH53DB6
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- DIODE GEN PURP 1.2KV 100A DIE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Tiristors - TRIACs and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRD3CH53DB6 electronic components. IRD3CH53DB6 can be shipped within 24 hours after order. If you have any demands for IRD3CH53DB6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRD3CH53DB6 Atribi pwodwi yo
Nimewo Pati :
IRD3CH53DB6
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE GEN PURP 1.2KV 100A DIE
Seri :
-
Estati Pati :
Obsolete
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
100A
Voltage - Forward (Vf) (Max) @ Si :
2.7V @ 100A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
270ns
Kouran - Fèy Reverse @ Vr :
2µA @ 1200V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Die
Operating Tanperati - Junction :
-40°C ~ 150°C
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