Infineon Technologies - IPP26CN10NGHKSA1

KEY Part #: K6409803

[156PC Stock]


    Nimewo Pati:
    IPP26CN10NGHKSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 100V 35A TO-220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IPP26CN10NGHKSA1 electronic components. IPP26CN10NGHKSA1 can be shipped within 24 hours after order. If you have any demands for IPP26CN10NGHKSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPP26CN10NGHKSA1 Atribi pwodwi yo

    Nimewo Pati : IPP26CN10NGHKSA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 100V 35A TO-220
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 26 mOhm @ 35A, 10V
    Vgs (th) (Max) @ Id : 4V @ 39µA
    Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2070pF @ 50V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 71W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : PG-TO220-3
    Pake / Ka : TO-220-3

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