Infineon Technologies - IDP30E65D2XKSA1

KEY Part #: K6440179

IDP30E65D2XKSA1 Pricing (USD) [73006PC Stock]

  • 1 pcs$0.53559
  • 500 pcs$0.42961

Nimewo Pati:
IDP30E65D2XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
DIODE GEN PURP 650V 60A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Modil pouvwa chofè, Diodes - Rèkteur - Single, Diodes - RF, Diodes - Bridge rèktifikateur and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDP30E65D2XKSA1 Atribi pwodwi yo

Nimewo Pati : IDP30E65D2XKSA1
Manifakti : Infineon Technologies
Deskripsyon : DIODE GEN PURP 650V 60A TO220-2
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 650V
Kouran - Mwayèn Rèktifye (Io) : 60A (DC)
Voltage - Forward (Vf) (Max) @ Si : 2.2V @ 30A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 42ns
Kouran - Fèy Reverse @ Vr : 40µA @ 650V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : PG-TO220-2-1
Operating Tanperati - Junction : -40°C ~ 175°C

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