IDB30E120ATMA1 Pricing (USD) [69605PC Stock]
- 1 pcs$0.56175
- 1,000 pcs$0.40580
- 2,000 pcs$0.37782
- 5,000 pcs$0.37315
- Nimewo Pati:
- IDB30E120ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- DIODE GEN PURP 1.2KV 50A TO263-3. Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 30A
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Zener - Single, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IDB30E120ATMA1 electronic components. IDB30E120ATMA1 can be shipped within 24 hours after order. If you have any demands for IDB30E120ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDB30E120ATMA1 Atribi pwodwi yo
Nimewo Pati :
IDB30E120ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE GEN PURP 1.2KV 50A TO263-3
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
50A (DC)
Voltage - Forward (Vf) (Max) @ Si :
2.15V @ 30A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
243ns
Kouran - Fèy Reverse @ Vr :
100µA @ 1200V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
PG-TO263-3
Operating Tanperati - Junction :
-55°C ~ 150°C
Dènye nouvèl
Ou ka enterese tou
-
IDB30E120ATMA1
Infineon Technologies
DIODE GEN PURP 1.2KV 50A TO263-3. Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 30A
-
-
ES2AHM3/5BT
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20NS,UF Rect,SMD
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