Diodes Incorporated - ZXM61P03FTC

KEY Part #: K6411082

[8490PC Stock]


    Nimewo Pati:
    ZXM61P03FTC
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET P-CH 30V 1.1A SOT23-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Diodes - RF, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction and Tiristors - SCR - Modil yo ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated ZXM61P03FTC electronic components. ZXM61P03FTC can be shipped within 24 hours after order. If you have any demands for ZXM61P03FTC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXM61P03FTC Atribi pwodwi yo

    Nimewo Pati : ZXM61P03FTC
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET P-CH 30V 1.1A SOT23-3
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.1A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 350 mOhm @ 600mA, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 4.8nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 625mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SOT-23-3
    Pake / Ka : TO-236-3, SC-59, SOT-23-3