Nimewo Pati :
APTGTQ200A65T3G
Manifakti :
Microsemi Corporation
Deskripsyon :
POWER MODULE - IGBT
Nou konte genyen :
Half Bridge
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
200A
Vce (sou) (Max) @ Vge, Ic :
2.2V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) :
200µA
Antre kapasite (Cies) @ Vce :
12nF @ 25V
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP3F