Vishay Semiconductor Diodes Division - BAS33-TAP

KEY Part #: K6439517

BAS33-TAP Pricing (USD) [2457210PC Stock]

  • 1 pcs$0.01505
  • 50,000 pcs$0.01370

Nimewo Pati:
BAS33-TAP
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 30V 200MA DO35. Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Tiristors - DIACs, SIDACs, Tiristors - SCR and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAS33-TAP electronic components. BAS33-TAP can be shipped within 24 hours after order. If you have any demands for BAS33-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS33-TAP Atribi pwodwi yo

Nimewo Pati : BAS33-TAP
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 30V 200MA DO35
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 30V
Kouran - Mwayèn Rèktifye (Io) : 200mA
Voltage - Forward (Vf) (Max) @ Si : 1V @ 100mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1nA @ 15V
Kapasite @ Vr, F : 3pF @ 0V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-204AH, DO-35, Axial
Pake Aparèy Founisè : DO-35
Operating Tanperati - Junction : 175°C (Max)

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