BAS116E6433HTMA1 Pricing (USD) [3737866PC Stock]
- 1 pcs$0.01160
- 10,000 pcs$0.01154
- Nimewo Pati:
- BAS116E6433HTMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Zener - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Diodes - RF and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BAS116E6433HTMA1 electronic components. BAS116E6433HTMA1 can be shipped within 24 hours after order. If you have any demands for BAS116E6433HTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS116E6433HTMA1 Atribi pwodwi yo
Nimewo Pati :
BAS116E6433HTMA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE GEN PURP 80V 250MA SOT23-3
Seri :
-
Estati Pati :
Last Time Buy
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
80V
Kouran - Mwayèn Rèktifye (Io) :
250mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 150mA
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
1.5µs
Kouran - Fèy Reverse @ Vr :
5nA @ 75V
Kapasite @ Vr, F :
2pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè :
SOT-23-3
Operating Tanperati - Junction :
150°C (Max)
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