ON Semiconductor - BAT54T

KEY Part #: K6458643

BAT54T Pricing (USD) [3395839PC Stock]

  • 1 pcs$0.01320
  • 18,000 pcs$0.01313

Nimewo Pati:
BAT54T
Manifakti:
ON Semiconductor
Detaye deskripsyon:
DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor BAT54T electronic components. BAT54T can be shipped within 24 hours after order. If you have any demands for BAT54T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAT54T Atribi pwodwi yo

Nimewo Pati : BAT54T
Manifakti : ON Semiconductor
Deskripsyon : DIODE SCHOTTKY 30V 200MA SOT523
Seri : -
Estati Pati : Last Time Buy
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 30V
Kouran - Mwayèn Rèktifye (Io) : 200mA
Voltage - Forward (Vf) (Max) @ Si : 1V @ 100mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 5ns
Kouran - Fèy Reverse @ Vr : 2µA @ 25V
Kapasite @ Vr, F : 10pF @ 1V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : SOT-23-3
Operating Tanperati - Junction : 125°C (Max)

Ou ka enterese tou
  • BAL74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA

  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode