IMBD4448-G3-18 Pricing (USD) [2227230PC Stock]
- 1 pcs$0.01752
- 10,000 pcs$0.01744
- Nimewo Pati:
- IMBD4448-G3-18
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 75V 150MA SOT23. Diodes - General Purpose, Power, Switching 100V 150mA 4ns 500mA IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division IMBD4448-G3-18 electronic components. IMBD4448-G3-18 can be shipped within 24 hours after order. If you have any demands for IMBD4448-G3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IMBD4448-G3-18 Atribi pwodwi yo
Nimewo Pati :
IMBD4448-G3-18
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 75V 150MA SOT23
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
75V
Kouran - Mwayèn Rèktifye (Io) :
150mA
Voltage - Forward (Vf) (Max) @ Si :
1V @ 10mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
4ns
Kouran - Fèy Reverse @ Vr :
2.5µA @ 70V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè :
SOT-23
Operating Tanperati - Junction :
150°C (Max)
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