Nexperia USA Inc. - PSMN4R8-100PSEQ

KEY Part #: K6408583

PSMN4R8-100PSEQ Pricing (USD) [22373PC Stock]

  • 1 pcs$1.84213
  • 10 pcs$1.64381
  • 100 pcs$1.34775
  • 500 pcs$1.03539
  • 1,000 pcs$0.87322

Nimewo Pati:
PSMN4R8-100PSEQ
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 100V TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Tiristors - SCR and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN4R8-100PSEQ electronic components. PSMN4R8-100PSEQ can be shipped within 24 hours after order. If you have any demands for PSMN4R8-100PSEQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN4R8-100PSEQ Atribi pwodwi yo

Nimewo Pati : PSMN4R8-100PSEQ
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 100V TO220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 278nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 14400pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 405W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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