Microsemi Corporation - APTGT100H120G

KEY Part #: K6533042

APTGT100H120G Pricing (USD) [829PC Stock]

  • 1 pcs$56.04433
  • 100 pcs$53.64987

Nimewo Pati:
APTGT100H120G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT MOD TRENCH FULL BRIDGE SP6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGT100H120G Atribi pwodwi yo

Nimewo Pati : APTGT100H120G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT MOD TRENCH FULL BRIDGE SP6
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Full Bridge Inverter
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 140A
Pouvwa - Max : 480W
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Kouran - Cutoff Pèseptè (Max) : 250µA
Antre kapasite (Cies) @ Vce : 7.2nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP6
Pake Aparèy Founisè : SP6